Temperature-Dependent Raman Scattering of ZnSe Nanowires

High pressure Raman scattering of silicon nanowires.

We study the high pressure response, up to 8 GPa, of silicon nanowires (SiNWs) with ∼ 15 nm diameter, by Raman spectroscopy. The first order Raman peak shows a superlinear trend, more pronounced compared to bulk Si. Combining transmission electron microscopy and Raman measurements we estimate the SiNWs' bulk modulus and the Grüneisen parameters. We detect an increase of Raman linewidth at ∼ 4 G...

Temperature-dependent Raman scattering of DyScO3 and GdScO3 single crystals.

We report a temperature-dependent Raman scattering investigation of DyScO(3) and GdScO(3) single crystals from room temperature up to 1200 °C. With increasing temperature, all modes decrease monotonically in wavenumber without anomaly, which attests to the absence of a structural phase transition. The high temperature spectral signature and extrapolation of band positions to higher temperatures...

Low temperature solution-phase growth of ZnSe and ZnSe/CdSe core/shell nanowires.

High quality ZnSe nanowires (NWs) and complementary ZnSe/CdSe core/shell species have been synthesized using a recently developed solution-liquid-solid (SLS) growth technique. In particular, bismuth salts as opposed to pre-synthesized Bi or Au/Bi nanoparticles have been used to grow NWs at low temperatures in solution. Resulting wires are characterized using transmission electron microscopy and...

Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

Raman scattering study of InAs nanowires under high pressure.

The pressure-dependent phonon modes of InAs nanowires have been investigated by Raman spectroscopy under high pressure up to ∼58 GPa. X-ray diffraction measurements show that InAs nanowires at 21 GPa exhibit a phase transition from a wurtzite to an orthorhombic crystal structure, with a corresponding drastic change in the first-order Raman spectra. In the low-pressure regime, a linear increase ...